PSRAM Merges the Best of DRAM and SRAM
Our PSRAM memory combines the high throughput and relatively low cost of DRAM technology with an SRAM-like architecture interface that makes replacing more expensive SRAM a snap. PSRAM also features a hidden refresh operation and SRAM pin compatibility so in some cases, you won't even have to change your design to switch to PSRAM. And our PSRAM offers low power consumption to boost battery life in mobile or power-sensitive applications that currently use SRAM.
We've compiled a lot of information about PSRAM. You can search our configurable PSRAM parts catalog, sorting for density, depth, or even part status. Or you can find links to some of our best technical notes, like Using Micron Asynchronous PSRAM with ADI ADSP-DF53x Blackfin® Processors, which has been very popular with embedded application designers.
PSRAM Part Catalog and Documentation
PSRAM 101: A Closer Look at PSRAM Features and Design
Not sure whether PSRAM is right for your application? Need more specifics to make an informed choice? We've written an in-depth technical note to help you. Learn how PSRAM integrates the best of Mobile DRAM and SRAM and review honest comparisons of competing mobile memory technologies.
Download PSRAM 101: An Introduction to Micron CellularRAM™ and PSRAM to learn how you can increase the performance of your mobile design.
PSRAM can help you create a power-lean design that won’t drain batteries or bust your power budget. PSRAM relies on several power-saving modes to consume less power than standard DRAM.
Temperature-compensated refresh that adjusts the PSRAM’s refresh rate based on ambient temperatures—when things are cool, your PSRAM slows down and takes it easy on your battery. Partial-array refresh and deep power-down ensure you only use power when you need it.
About the only thing that could save you more power in a dynamic RAM would be if the device operated at a lower voltage. We’ve got you covered. Our CellularRAM® memory devices operate at just 1.7V–1.95V.
A typical SRAM device has six transistors. Basically, SRAM uses a word line to control access to two of those transistors, which then manage whether or not a cell should be connected to a bit line, and on and on.
But PSRAM is simpler. At Micron, our DRAM (PSRAM) uses just two transistors per memory cell. Now, what do you think would cost more—an SRAM cell with six or more transistors, or a sleek PSRAM cell with just two transistors? It’s a matter of manufacturing.
DRAM costs less to make, and we can pass that cost savings on to you, our customer. PSRAM lets you take advantage of the basic architectural DRAM price advantage without giving up SRAM’s simple interface. You get easy integration, performance, and a lower price.
PSRAM Features and Benefits
| |
Features |
Benefits |
| Densities |
4Mb-8Mb |
A range of densities makes it easy to find the right replacement for SRAM in your designs. |
| Configuration |
x16 |
Available in x16 word sizes with selectable bytes and burst lengths to give you more flexibility.
|
Supply Voltages
|
2.7V-3.6V core
2.7V-3.6V I/O: 4Mb
1.7V-3.3V I/O: 8Mb |
A single device that can operate over an extended VCCQ range for easy design in. |
Power Consumption
|
ISB = 30μA (TYP)
ICC1 = 15mA (TYP) |
Offers extremely low power dissipation in standby and active modes. Partial-array refresh (PAR) in standby mode provides even greater power savings. |
Temperature Range
|
–30°C to +85°C |
Enables operation in extreme environments which can be particularly important for mobile, automotive, or other embedded applications. |
Package
|
48-ball VFBGA
|
Perfect for space-limited applications; at 6mm x 8mm x 1mm, the package for the 4Mb and 8Mb devices is among the industry’s smallest.
|
Unique Features of PSRAM
Our PSRAM offers a host of special features that help make it an ideal choice for a wide range of applications.
Variable Latency
Cuts access time in half, making first data available as quickly as 35ns.
Fixed Latency
Enables compatibility with older systems.
Adjustable Output Drive
Enables users to tune outputs to match system impedance and minimize noise and power.
Partial-Array Refresh (PAR)
Reduces standby current by refreshing only that part of the memory array required by the host system.
On-Board Temperature Sensor
Reduces standby current by automatically adjusting the refresh rate according to the operating temperature of the device.
Deep Power-Down (DPD)
Disables all refresh-related activity to reduce current consumption if the system does not require the storage provided by the PSRAM device.
Why Buy Micron?
- Technology Leader
Micron's manufacturing efficiencies, cutting-edge innovations, and leading patent portfolio lead the industry in technological excellence.
- Product Breadth
With a full line of DRAM components, modules, and NAND Flash products, we have the right device for your design.
- Technical Support
Micron's engineering and technical assistance can provide the competitive advantage you need to get your designs to market faster.
- Quality Products
Stringent quality and reliability testing makes our devices stand out as some of the highest-quality parts in the industry.
- Customer Commitment
We work closely with other vendors, manufacturers, and enablers to help you deliver a complete, proven solution.
- Environmental Certification
All devices are available in Pb-free versions, and many offer the added environmental protection of "green" packaging.