LRDIMM

Rack Up Server Performance with Load-Reduced DIMMs

LRDIMMs support higher densities than RDIMMs and enable you to add more DIMMs per channel. The result? More density, more bandwidth.

Extended Memory Capacity

While standard RDIMMs present multiple loads for dual-rank and quad-rank versions and limit the amount of data you can load to the data bus, our load-reduced DIMMs (LRDIMMs) use a specially designed buffer to reduce the data load to a single load (up to an 8-rank DIMM). Implementing LRDIMMs enables you to add more DIMMs per channel and increase the memory capacity and speed of your systems. And because our LRDIMMs are designed using Micron’s low-power, 2Gb-based, 50nm DDR3 chips, which reduces module chip count, they offer more cost-effective and efficient means to scale server memory capacity and performance, while also reducing the power levels.

LRDIMM Part Information and Documentation

We are currently sampling limited quantities of LRDIMMs to select customers. Contact Micron for LRDIMM availability and documentation.

Industry-Leading Quality
Because we build both the DDR3 components and finished modules, we can carefully test our LRDIMMs at each stage of the manufacturing process. We’re also working closely with buffer suppliers and server OEMs to ensure that our LRDIMMs function well with multiple server platforms.

	Features	Benefits
Density	16GB	High module density (and more DIMMs per channel) enables up to three times more memory density per server
Supply Voltage	1.35V 1.5V	Low-voltage DDR3 supports better power efficiency
Data Rate	1067 MT/s 1333 MT/s	High data rates combine with three DIMMs per channel to enable up to 57% higher bandwidth
Temperature Range	0° to +95°	Increased operating ranges for optimum functionality in temperature extremes
Form Factors	VLP, LP	Low-profile module options optimize server board space and airflow

Title & Description	ID#	Updated	Size
Proper Handling Procedures for Micron DIMMs:		12/2009	406KB
Proper Installation Procedures for Micron DIMMs:		12/2009	430KB
Proper Handling of Micron DIMMs – Japanese:		12/2009	465KB
Proper Installation of Micron DIMMs – Japanese:		12/2009	404KB
Proper Handling of Micron DIMMs – Simplified Chinese:		12/2009	494KB
Proper Installation of Micron DIMMs – Simplified Chinese:		12/2009	607KB
Proper Handling of Micron DIMMs – Spanish:		12/2009	473KB
Proper Installation of Micron DIMMs – Spanish:		12/2009	560KB
Proper Handling of Micron DIMMs – Traditional Chinese:		12/2009	553KB
Proper Installation of Micron DIMMs – Traditional Chinese:		12/2009	777KB
Bypass Capacitor Selection for High-Speed Designs: Describes bypass capacitor selection for high-speed designs.	TN-00-06	12/2009	490KB
Thermal Applications: Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature	TN-00-08	5/2010	258KB
Recommended Soldering Parameters: Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.	TN-00-15	3/2007	71KB
Uprating of Semiconductors for High-Temperature Applications: Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications	TN-00-18	5/2010	439KB
Understanding Signal Integrity: Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life	TN-00-20	12/2009	2MB
Memory Module Serial Presence-Detect: Describes how SPD is essential in helping to standardize the configuration, timing, and manufacturing information of memory modules	TN-04-42	12/2009	518KB
Comparing Module Parameters: Compares module parameters.	TN-04-49	3/2003	54KB
High-Speed DRAM Controller Design: Identifies and discusses five key areas of DRAM controller design	TN-04-54	4/2008	1MB
DRAM Module Form Factors: Compares the most common DRAM module form factors	TN-04-55	9/2009	446KB
Module Part Numbering Systems: Part numbering guides for Micron DDR3, DDR, DDR, and SDRAM modules.		9/2009	41KB
Product Marks/Product and Packaging Labels: Explains product part marking, and product and packaging labels.	CSN-11	2/2010	580KB
PCN/EOL Systems: Explains Micron's product change notification and end-of-life systems.	CSN-12	8/2009	77KB
Shipping Quantities: Provides tables of part quantity.	CSN-04	9/2010	753KB
Micron Component and Module Packaging: Explanation of Micron packaging labels and procedures.	CSN-16	3/2010	833KB
ESD Precautions for Die/Wafer Handling and Assembly: Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.	CSN-24	8/2010	122KB
Electronic Data Interchange: Describes EDI transmission sets, protocol, and contacts.	CSN-06	9/2005	55KB
RMA Procedures for Packaged Product and Bare Die Devices: Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs.	CSN-07	8/2004	52KB
Environmental Programs: Describes the environmental programs at Micron, including air quality, pollution prevention, reclamation and reuse, and waste recycling and reduction.	CSN-05	6/2004	55KB
ISO System Management Standards: Describes ISO system management standards.	CSN-08	4/2004	40KB
Competitive DDR Memory Subsystems: DDR milestones and platform design		12/2009	3MB
DDR System Design Considerations: DDR overview		12/2009	4MB
The Future of Memory and Storage: Overview of trends for main memory and Flash memory		12/2009	2MB
Moisture Absorption in Plastic Packages: Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture	TN-00-01	2/2010	89KB
Avoid Counterfeit Products: Highlights Micron-guaranteed products and how to buy genuine Micron products.		3/2010	201KB

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Can Vtt and Vref be supplied by the same supply in my system design?: With proper decoupling this can be an acceptable design. However, Micron recommends ensuring all supplies are separated. Vref tends to have more noise on it because it supplies signals that are regularly switching. A robust design would typically not connect these supplies due to the possibility of introducing this noise onto the Vtt plane which should be as stable as possible. Additionally, Vref requires much less current than Vtt.
Is there a set of trace lengths and routing rules that are standard for use when designing a system that uses a specific module technology and form factor?: No. A robust memory subsystem design that includes the use of 1 or more memory modules must be simulated in order to determine the optimum trace lengths, terminations. However, our design guides such as TN-47-01 and TN-41-08 have some best practices and design examples based on some typical system assumptions. This information is not meant to be the only way your system can be designed. It is a starting point and moreover an example of the steps used to determine the best design for your system.

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LRDIMM

Rack Up Server Performance with Load-Reduced DIMMs

Extended Memory Capacity

LRDIMM Part Information and Documentation

ON-LINE NONDISCLOSURE AGREEMENT

ON-LINE NONDISCLOSURE AGREEMENT

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