Mobile LPDRAM

Optimizing Performance in Low-Power Applications

Providing the low power and high performance you need for advanced, feature-rich designs.

All You Need to Know About Mobile LPDRAM

Consumers want more features and functionality from their mobile devices, and you're expected to design it all in with less power, less time, and less space. We understand those design challenges and offer a wide range of Mobile low-power DRAM parts to help you meet them.Our Mobile LPDRAM has the low power consumption, high performance, and wide temperature ranges you need to give your customers greater mobility and longer battery life.

Mobile LPDRAM Part Catalogs and Documentation

Dramatic Power Savings
Our Mobile LPDRAM is built to consume less power without sacrificing performance. It uses a JEDEC-standard 1.8V I/O power supply—1.2V for LPDDR2—which enables low standby current and low self refresh and extends battery life. To further cut power consumption, Mobile LPDRAM makes use of lower Idd voltages, and we have both temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR) modes on-chip to ensure you don’t use up battery power when you don’t need to.

Design In the Fastest Mobile LPDRAM
Our Mobile LPDDR was the first to deliver maximum clock speeds of 200 MHz—enabling blazing-fast transfer speeds of 400 Mb/s—and now our LPDDR2-1066 part is pushing the benchmark even further, to 533 MHz. Plus, the LPDDR have a low-power 1.2V I/O, so you won't bog down performance or burn up precious battery time.

Features		Benefits
Densities	64Mb to 512Mb (LPSDR) 128Mb to 8Gb (LPDDR) 1Gb to 8Gb (LPDDR2)	Provides flexibility for a variety of application designs
Configurations	x16, x32 (LPSDR/LPDDR) x16, x32, x64 (LPDDR2)	Enables the use of fewer components to support wide-bus architectures
Voltage	1.8V (LPSDR/LPDDR) 1.2V (LPDDR2)	Helps reduce power consumption—a key advantage over standard DRAM
Clock Frequencies	Up to 167 MHz (LPSDR) Up to 200 MHz (LPDDR) Up to 533 MHz (LPDDR2)	Provides performance comparable to SDR and DDR SDRAM, with the added advantage of power savings
Power Consumption	Refer to data sheet	Delivers low power dissipation in standby and active modes, plus special mobile features to reduce power consumption for a more efficient design
Special Features	Temperature-compensated self refresh (TCSR)	Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
	Partial-array self refresh (PASR)	Eliminates unnecessary row activations; refreshes 1/1, 1/2, 1/4, 1/8, 1/16 array
	Deep-power down (DPD)	Provides a low power state when data retention is not required
	Programmable drive strength (DS)	Enables drive currents to be reduced in point-to-point applications; easily adjusts to full, half, quarter, or eighth, based on memory bus loading
Temperature Ranges	0˚C to +70˚C 0˚C to +85˚C -40˚C to +85˚C -40˚C to +95˚C -40˚C to +105˚C	Enables high performance in extreme environments
Packages	VFBGA	Reduces footprint by up to 40% relative to standard SDR and DDR SDRAM for a smaller, more compact design; supports JEDEC-standard VFBGA pinout
	Known good die	Supports bare die with edge bond pads for easy stacking in SIP and MCP solutions
	PoP	Saves board space by allowing a Mobile LPDRAM to be stacked on top of a processor so that the two components require only one footprint on the board; contact factory for availability

SoC, SiP, PoP, MCP? Choose the Right Die-Stacking Solution

No one die-stacking technology suits every application. Each offers different benefits in terms of four key design elements: board space, height, performance, and cost. In the 20-minute online presentation titled "Multi-Die Stacking: Choosing the Right Solution," learn the advantages and disadvantages of four popular stacking solutions—SoC, SiP, PoP, and MCP. Let Micron’s experts help you pick the best technology for your application. Click View Now to begin the presentation.

View Now

Title & Description	ID#	Updated	Size
Mobile LPDRAM Product Flyer: 6 Advantages of Designing With Micron's Mobile LPDRAM		11/2009	152KB
Bypass Capacitor Selection for High-Speed Designs: Describes bypass capacitor selection for high-speed designs.	TN-00-06	12/2009	490KB
IBIS Behavioral Models: Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site.	TN-00-07	11/2009	168KB
Thermal Applications: Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature	TN-00-08	5/2010	258KB
Understanding the Quality and Reliability Requirements for Bare Die Applications: Describes the quality and reliability requirements for bare die applications	TN-00-14	10/2009	156KB
Recommended Soldering Parameters: Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.	TN-00-15	3/2007	71KB
Uprating of Semiconductors for High-Temperature Applications: Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications	TN-00-18	5/2010	439KB
Understanding Signal Integrity: Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life	TN-00-20	12/2009	2MB
SEMI Wafer Map Format: Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI®). With SEMI formatting, Micron’s customers can be confident they will always receive consistent, compatible, reliable map files.	TN-00-21	2/2009	113KB
Thinning Considerations for Wafer Products: Information on optimal wafer-thinning processes to meet specific customer requirements	TN-00-19	10/2009	75KB
Power-Saving Features of Mobile LPDRAM: Addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory	TN-46-12	5/2009	262KB
Mobile LPDDR Versus Standard DDR SDRAM: An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR	TN-46-15	12/2007	443KB
Interface Design Guide for STMicroelectronics Cartesio Microprocessor: Guidelines for interconnecting the STA2062 dynamic bus controller to two Micron 512Mb Mobile LPDDR devices	TN-46-18	8/2008	3MB
Mobile LPDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips: Provides guidance for the development of multilayer board designs	TN-46-19	11/2008	566KB
Product Marks/Product and Packaging Labels: Explains product part marking, and product and packaging labels.	CSN-11	2/2010	580KB
PCN/EOL Systems: Explains Micron's product change notification and end-of-life systems.	CSN-12	8/2009	77KB
Wafer Packaging and Packaging Materials: Provides complete shipping and recycling information about each of the materials used for shipping Micron® products.	CSN-20	3/2010	587KB
Bare Die SiPs and MCMs: Describes design considerations for bare die SiPs and MCMs.	CSN-18	4/2009	155KB
Shipping Quantities: Provides tables of part quantity.	CSN-04	9/2010	753KB
Micron KGD Definitions: Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die.	CSN-22	7/2009	67KB
Proper Handling Procedures for Modules: Includes procedures for how to properly handle modules.	CSN-23	12/2007	1MB
Micron Component and Module Packaging: Explanation of Micron packaging labels and procedures.	CSN-16	3/2010	833KB
ESD Precautions for Die/Wafer Handling and Assembly: Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.	CSN-24	8/2010	122KB
Electronic Data Interchange: Describes EDI transmission sets, protocol, and contacts.	CSN-06	9/2005	55KB
RMA Procedures for Packaged Product and Bare Die Devices: Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs.	CSN-07	8/2004	52KB
Environmental Programs: Describes the environmental programs at Micron, including air quality, pollution prevention, reclamation and reuse, and waste recycling and reduction.	CSN-05	6/2004	55KB
ISO System Management Standards: Describes ISO system management standards.	CSN-08	4/2004	40KB
The Future of Memory and Storage: Overview of trends for main memory and Flash memory		12/2009	2MB
DRAM Component Part Numbering System: Part numbering guide for DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components		5/2010	33KB
FBGA Date Codes: Date codes for FBGA-packaged components		8/2005	23KB
Avoid Counterfeit Products: Highlights Micron-guaranteed products and how to buy genuine Micron products.		3/2010	201KB
Design Guide - Dealing with DDR2/DDR3 Clock Jitter: Explores DDR2/DDR3 clock jitter specifications and provides guidance on how to apply them and how to deal with violations	TN-04-56	9/2008	279KB

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Are Micron's Mobile LPDRAM products green/RoHS compliant?: Yes. Micron’s green engineering program is RoHS-compliant and conforms with most of the world’s emerging environmental standards, including those in Asia and Europe.
Are your Mobile LPDRAM parts JEDEC-compliant?: We design our parts to meet or exceed the JEDEC specification. As standards change, we will make the necessary changes to ensure our parts meet new specifications. Any changes made will be noted in a product change notice (PCN) and sent to our customers.
Do you recommend a x8, x16, or x32 configuration for mobile applications?: Mobile LPDRAM is offered in x16, x32, and x64. To make the best Mobile LPDRAM choice, consider the application, bandwidth/throughput, physical space on the PCB, and power consumption.
Does Micron's Mobile LPDRAM cost more than standard DRAM?: It depends. Density plays a major role in price comparisons between Mobile LPDRAM and standard SDR/DDR. Also, since Mobile LPDRAM is offered in standard configurations of x16, x32 and x64, you may be able to reduce your overall BOM cost if your application currently uses two x16 components to support a x32 bus. You could use one x32 Mobile LPDRAM instead of two x16 standard DRAM. Contact your local rep for cost information.
Is Mobile LPDRAM a growing market?: Absolutely. iSuppli estimates that the market for Mobile LPDRAM is growing rapidly, with a CAGR of 21.2% from 2006 to 2011. We’re continuing to develop advanced Mobile LPDRAM solutions to meet this growing market.
The part I was using is obsolete and the replacement is a faster speed grade. Can I run the Mobile LPDRAM parts at a lower speed?: Yes. A Mobile LPDRAM part can be run at any speed equal to or slower than its rated speed grade.
What is Mobile LPDRAM?: Optimized for products where power consumption is a concern, our low-power Mobile LPDRAM devices combine leading-edge technologies and packaging options to meet space requirements and extend battery life. Mobile LPDRAM is available with DDR/SDR interface.
What is the life expectancy of Micron's Mobile LPDRAM products?: We're excited about this fast-growing market. We plan to manufacture Mobile LPDRAM for many years to come and plan to continue to shrink our designs to achieve higher densities.
What makes Micron's Mobile LPDRAM unique?: We offer a comprehensive Mobile LPDRAM product portfolio, with a wide range of densities and package options (including JEDEC-standard VFBGA, Known Good Die, and package-on-package). With nearly a decade of Mobile LPDRAM experience, our worldwide technical support team can provide the expertise and assistance you need to get your designs to market faster.
What Mobile LPDRAM parts have been validated on the OMAP™35x?: Micron works closely with Texas Instruments (TI) to validate and optimize our parts for the OMAP35x processors. As we work with the OMAP35x team, the list of validated memory devices expands frequently. For the most current information, contact your local Micron support, or contact Micron Product Sales Support.
What’s the difference between Mobile DRAM and Mobile LPDRAM?: There is no difference; Mobile DRAM and Mobile LPDRAM are the same product. We opted to add the “LP” prefix to our Mobile DRAM product line to align with the common terminology used throughout the industry and to ensure our customers know at a glance that our Mobile DRAM is a low-power memory device. In addition to the family name change, Mobile DDR SDRAM and Mobile SDR SDRAM are now called Mobile LPDDR and Mobile LPSDR, respectively. Our Web site has been wholly converted to the Mobile LPDRAM naming convention, but because we’re updating our PDFs as they come up for review you may see a few older technical documents that still use the old Mobile DRAM terminology.
Where are Micron's Mobile LPDRAM products used today?: Our Mobile LPDRAM products are used in a wide variety of applications. The most popular are consumer electronic devices like digital still cameras and MP3 players, as well as mobile phones and PDAs. Automotive, medical, and military companies, which are very stringent on quality and reliability, use Mobile LPDRAM to take advantage of the wide industrial temperature range of –40°C to +105°C, which other memory vendors don’t support. It’s also designed in to a variety of networking applications.

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Mobile LPDRAM

Optimizing Performance in Low-Power Applications

All You Need to Know About Mobile LPDRAM

Mobile LPDRAM Part Catalogs and Documentation

SoC, SiP, PoP, MCP? Choose the Right Die-Stacking Solution

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