Mobile LPDRAM

Mobile LPDRAM

Optimizing Performance in Low-Power Applications

Providing the low power and high performance you need for advanced, feature-rich designs.

Mobile ComputingAll You Need to Know About Mobile LPDRAM 

Consumers want more features and functionality from their mobile devices, and you're expected to design it all in with less power, less time, and less space. We understand those design challenges and offer a wide range of Mobile low-power DRAM parts to help you meet them.Our Mobile LPDRAM has the low power consumption, high performance, and wide temperature ranges you need to give your customers greater mobility and longer battery life.

Mobile LPDRAM Part Catalogs and Documentation

Dramatic Power Savings
Our Mobile LPDRAM is built to consume less power without sacrificing performance. It uses a JEDEC-standard 1.8V I/O power supply—1.2V for LPDDR2—which enables low standby current and low self refresh and extends battery life. To further cut power consumption, Mobile LPDRAM makes use of lower Idd voltages, and we have both temperature-compensated self refresh (TCSR) and partial-array self refresh (PASR) modes on-chip to ensure you don’t use up battery power when you don’t need to.

Design In the Fastest Mobile LPDRAM
Our Mobile LPDDR was the first to deliver maximum clock speeds of 200 MHz—enabling blazing-fast transfer speeds of 400 Mb/s—and now our LPDDR2-1066 part is pushing the benchmark even further, to 533 MHz. Plus, the LPDDR have a low-power 1.2V I/O, so you won't bog down performance or burn up precious battery time.

Features Benefits
Densities 64Mb to 512Mb (LPSDR)
128Mb to 8Gb (LPDDR)
1Gb to 8Gb (LPDDR2)		 Provides flexibility for a variety of application designs
Configurations x16, x32 (LPSDR/LPDDR)
x16, x32, x64 (LPDDR2)  		Enables the use of fewer components to support wide-bus architectures
Voltage 1.8V (LPSDR/LPDDR)
1.2V (LPDDR2) 		Helps reduce power consumption—a key advantage over standard DRAM
Clock Frequencies Up to 167 MHz (LPSDR)
Up to 200 MHz (LPDDR)
Up to 533 MHz (LPDDR2) 		Provides performance comparable to SDR and DDR SDRAM, with the added advantage of power savings
Power Consumption Refer to data sheet Delivers low power dissipation in standby and active modes, plus special mobile features to reduce power consumption for a more efficient design
Special Features Temperature-compensated self refresh (TCSR) Adjusts refresh timing to minimize power consumption at lower, ambient temperatures
Partial-array self refresh (PASR) Eliminates unnecessary row activations; refreshes 1/1, 1/2, 1/4, 1/8, 1/16 array
Deep-power down (DPD) Provides a low power state when data retention is not required
Programmable drive strength (DS) Enables drive currents to be reduced in point-to-point applications; easily adjusts to full, half, quarter, or eighth, based on memory bus loading
Temperature Ranges 0˚C to +70˚C
0˚C to +85˚C
-40˚C to +85˚C
-40˚C to +95˚C
-40˚C to +105˚C 		Enables high performance in extreme environments
Packages  VFBGA Reduces footprint by up to 40% relative to standard SDR and DDR SDRAM for a smaller, more compact design; supports JEDEC-standard VFBGA pinout
Known good die Supports bare die with edge bond pads for easy stacking in SIP and MCP solutions
PoP Saves board space by allowing a Mobile LPDRAM to be stacked on top of a processor so that the two components require only one footprint on the board; contact factory for availability

SoC, SiP, PoP, MCP? Choose the Right Die-Stacking Solution

No one die-stacking technology suits every application. Each offers different benefits in terms of four key design elements: board space, height, performance, and cost. In the 20-minute online presentation titled "Multi-Die Stacking: Choosing the Right Solution," learn the advantages and disadvantages of four popular stacking solutions—SoC, SiP, PoP, and MCP. Let Micron’s experts help you pick the best technology for your application. Click View Now to begin the presentation.

View Now

Type Secure Title & Description ID# Updated Size
IBIS Behavioral Models:  Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 163.98 KB
Thermal Applications:  Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature TN-00-08 05/2010 252.18 KB
Understanding Quality and Reliability Requirements for Bare Die Applications:  Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 152.83 KB
Recommended Soldering Parameters:  Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 03/2007 69.09 KB
Uprating of Semiconductors for High-Temperature Applications:  Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 428.33 KB
Understanding Signal Integrity:  Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 1.52 MB
SEMI Wafer Map Format:  Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 02/2009 110 KB
Thinning Considerations for Wafer Products:  Information on optimal wafer-thinning processes to meet specific customer requirements TN-00-19 10/2009 73.58 KB
Power-Saving Features of Mobile LPDRAM:  Addresses the power-saving features and power calculations of low-power Mobile LPDRAM memory TN-46-12 05/2009 255.93 KB
Mobile LPDDR Versus Standard DDR SDRAM:  An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR TN-46-15 12/2007 432.44 KB
Interface Design Guide for STMicroelectronics Cartesio Microprocessor:  Guidelines for interconnecting the STA2062 dynamic bus controller to two Micron 512Mb Mobile LPDDR devices TN-46-18 08/2008 2.67 MB
Mobile LPDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips:  Provides guidance for the development of multilayer board designs TN-46-19 11/2008 552.55 KB
PCN/EOL Systems:  Explains Micron's product change notification and end-of-life systems. CSN-12 08/2009 75.58 KB
Wafer Packaging and Packaging Materials:  Provides complete shipping and recycling information about each of the materials used for shipping Micron's products. CSN-20 09/2011 776.24 KB
Bare Die SiPs and MCMs:  Describes design considerations for bare die SiPs and MCMs. CSN-18 04/2009 151.06 KB
Shipping Quantities:  Provides tables of part quantity. CSN-04 10/2011 463.55 KB
Micron KGD Definitions:  Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. CSN-22 07/2009 65.52 KB
Proper Handling Procedures for Modules:  Includes procedures for how to properly handle modules. CSN-23 12/2007 1.02 MB
Micron Component and Module Packaging:  Explanation of Micron packaging labels and procedures. CSN-16 02/2012 840.61 KB
ESD Precautions for Die/Wafer Handling and Assembly:  Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. CSN-24 08/2010 119.08 KB
Electronic Data Interchange:  Describes EDI transmission sets, protocol, and contacts. CSN-06 09/2005 53.5 KB
RMA Procedures for Packaged Product and Bare Die Devices:  Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. CSN-07 10/2010 82.64 KB
ISO System Management Standards:  Describes ISO system management standards. CSN-08 04/2004 39.18 KB
The Future of Memory and Storage:  Overview of trends for main memory and Flash memory 12/2009 1.54 MB
Mobile LPDRAM Product Flyer:  6 Advantages of Designing With Micron's Mobile LPDRAM 11/2009 148.02 KB
DRAM Component Part Numbering System:  Part numbering guide for DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components 02/2012 39.77 KB
FBGA Date Codes:  Date codes for FBGA-packaged components 08/2005 22.36 KB
Accelerate Design Cycles with Simulation Models:  Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 206.91 KB
Design Guide - Dealing with DDR2/DDR3 Clock Jitter:  Explores DDR2/DDR3 clock jitter specifications and provides guidance on how to apply them and how to deal with violations TN-04-56 09/2008 272.53 KB
Micron Wire-Bonding Techniques:  This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 66.13 KB
Industrial and Multi-Market Applications Flyer:  Our extensive and stable portfolio of IMM-focused memory solutions empower technology developments in automotive, industrial, medical, manufacturing, and other multi-market segments. Product Flyer 08/2011 593.95 KB
TN_4622_t69m_t79m_trans_guide:  Transition guide for migration from T69M to T79M 06/2011 147.18 KB
Micron BGA Manufacturer's User Guide:  Provides information to enable customers to easily integrate both leading-edge and legacy Micron's ball grid array (BGA) packages into their manufacturing processes. It is intended as a set of high-level guidelines and a reference manual describing typical package-related and manufacturing process-flow practices. CSN-33 07/2011 353.32 KB
Product Marks/Product and Packaging Labels:  Explains product part marking, and product and packaging labels. CSN-11 02/2012 666.83 KB
Bypass Capacitor Selection for High-Speed Designs:  Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 481.9 KB

Please Note: To view Secure Documents (Secure Lock) please log in or click on a secured document to request access.

Are Micron's Mobile LPDRAM products green/RoHS compliant?
Yes. Micron’s green engineering program is RoHS-compliant and conforms with most of the world’s emerging environmental standards, including those in Asia and Europe.
Are your Mobile LPDRAM parts JEDEC-compliant?
We design our parts to meet or exceed the JEDEC specification. As standards change, we will make the necessary changes to ensure our parts meet new specifications. Any changes made will be noted in a product change notice (PCN) and sent to our customers.
Do you recommend a x8, x16, or x32 configuration for mobile applications?
Mobile LPDRAM is offered in x16, x32, and x64. To make the best Mobile LPDRAM choice, consider the application, bandwidth/throughput, physical space on the PCB, and power consumption.
Does Micron's Mobile LPDRAM cost more than standard DRAM?
It depends. Density plays a major role in price comparisons between Mobile LPDRAM and standard SDR/DDR. Also, since Mobile LPDRAM is offered in standard configurations of x16, x32 and x64, you may be able to reduce your overall BOM cost if your application currently uses two x16 components to support a x32 bus. You could use one x32 Mobile LPDRAM instead of two x16 standard DRAM. Contact your local rep for cost information.
Is Mobile LPDRAM a growing market?
Absolutely. iSuppli estimates that the market for Mobile LPDRAM is growing rapidly, with a CAGR of 21.2% from 2006 to 2011. We’re continuing to develop advanced Mobile LPDRAM solutions to meet this growing market.
The part I was using is obsolete and the replacement is a faster speed grade. Can I run the Mobile LPDRAM parts at a lower speed?
Yes. A Mobile LPDRAM part can be run at any speed equal to or slower than its rated speed grade.
What is Mobile LPDRAM?
Optimized for products where power consumption is a concern, our low-power Mobile LPDRAM devices combine leading-edge technologies and packaging options to meet space requirements and extend battery life. Mobile LPDRAM is available with DDR/SDR interface.
What is the life expectancy of Micron's Mobile LPDRAM products?
We're excited about this fast-growing market. We plan to manufacture Mobile LPDRAM for many years to come and plan to continue to shrink our designs to achieve higher densities.
What makes Micron's Mobile LPDRAM unique?
We offer a comprehensive Mobile LPDRAM product portfolio, with a wide range of densities and package options (including JEDEC-standard VFBGA, Known Good Die, and package-on-package). With nearly a decade of Mobile LPDRAM experience, our worldwide technical support team can provide the expertise and assistance you need to get your designs to market faster.
What Mobile LPDRAM parts have been validated on the OMAP35x?
Micron works closely with Texas Instruments (TI) to validate and optimize our parts for the OMAP35x processors. As we work with the OMAP35x team, the list of validated memory devices expands frequently. For the most current information, contact your local Micron support, or contact Micron Product Sales Support.
What’s the difference between Mobile DRAM and Mobile LPDRAM?
There is no difference; Mobile DRAM and Mobile LPDRAM are the same product. We opted to add the "LP" prefix to our Mobile DRAM product line to align with the common terminology used throughout the industry and to ensure our customers know at a glance that our Mobile DRAM is a low-power memory device. In addition to the family name change, Mobile DDR SDRAM and Mobile SDR SDRAM are now called Mobile LPDDR and Mobile LPSDR, respectively. Our Web site has been wholly converted to the Mobile LPDRAM naming convention, but because we’re updating our PDFs as they come up for review you may see a few older technical documents that still use the old Mobile DRAM terminology.
Where are Micron's Mobile LPDRAM products used today?
Our Mobile LPDRAM products are used in a wide variety of applications. The most popular are consumer electronic devices like digital still cameras and MP3 players, as well as mobile phones and PDAs. Automotive, medical, and military companies, which are very stringent on quality and reliability, use Mobile LPDRAM to take advantage of the wide industrial temperature range of –40°C to +105°C, which other memory vendors don’t support. It’s also designed in to a variety of networking applications.

Mobile LPDRAM

Related Information