DDR3 SDRAM Tech Notes

Type Secure Title & Description ID# Updated Size
IBIS Behavioral Models:  Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. TN-00-07 11/2009 163.98 KB
Thermal Applications:  Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature TN-00-08 05/2010 252.18 KB
Understanding Quality and Reliability Requirements for Bare Die Applications:  Describes the quality and reliability requirements for bare die applications TN-00-14 10/2009 152.83 KB
Recommended Soldering Parameters:  Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. TN-00-15 03/2007 69.09 KB
Uprating of Semiconductors for High-Temperature Applications:  Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications TN-00-18 05/2010 428.33 KB
Understanding Signal Integrity:  Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life TN-00-20 12/2009 1.52 MB
SEMI Wafer Map Format:  Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files. TN-00-21 02/2009 110 KB
Thinning Considerations for Wafer Products:  Information on optimal wafer-thinning processes to meet specific customer requirements TN-00-19 10/2009 73.58 KB
Calculating Memory System Power For DDR3 :  Details how DDR3 SDRAM consumes power and provides the tools that system designers can use to estimate power consumption. TN-41-01 05/2007 1.12 MB
DDR3 ZQ Calibration:  Describes how the DDR3 SDRAM driver design has been enhanced TN-41-02 02/2008 250.61 KB
DDR3 Dynamic On-Die Termination :  With DDR3, dynamic ODT provides systems with increased flexibility to optimize termination values for different loading conditions TN-41-04 03/2008 370.26 KB
DDR3 Termination Data Strobe :  Provides guidelines for using the TDQS feature to reduce signal integrity issues associated with mismatched DQS loading in in combined x4-based/x8-based systems TN-41-06 03/2008 152.41 KB
DDR3 Power-Up, Initialization, and Reset:  Describes power-up, initialization, and reset with DDR3. TN-41-07 10/2008 504.77 KB
Moisture Absorption in Plastic Packages:  Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture TN-00-01 02/2010 87.26 KB
Accelerate Design Cycles with Simulation Models:  Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design. TN-00-09 02/2010 206.91 KB
Design Guide - Dealing with DDR2/DDR3 Clock Jitter:  Explores DDR2/DDR3 clock jitter specifications and provides guidance on how to apply them and how to deal with violations TN-04-56 09/2008 272.53 KB
Micron Wire-Bonding Techniques:  This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products. TN-00-22 11/2010 66.13 KB
Bypass Capacitor Selection for High-Speed Designs:  Describes bypass capacitor selection for high-speed designs. TN-00-06 03/2011 481.9 KB

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DDR3 SDRAM