Boost Mobile Performance and Value
Our CellularRAM® memory combines low power consumption and high speed for your mobile designs.
Merging the Best of DRAM and SRAM
CellularRAM® memory is a pseudo-static DRAM (PSRAM) device that features an SRAM-like architecture, hidden refresh operation, and SRAM pin-compatibility. This hybrid memory delivers the best of SRAM and DRAM features, combining low power consumption and high-speed read and write functions. Because CellularRAM memory also offers synchronous operations, fast access, and variable latency initial burst access, you get high throughput and excellent performance. It's an ideal solution for low-power, space-limited designs like MCPs, as well as mobile and industrial applications.
CellularRAM Part Catalog and Documentation
Compatibility and Ease of Design
Our CellularRAM memory is compatible with the standard wireless Flash interface,
and it's easy to use in an MCP with burst Flash memory. It also uses the same
voltage range, package options, and ball assignments as standard SRAM, making
CellularRAM memory an easy decision—and an even easier transition, saving
you design time.
Power-Saving Features
With CellularRAM memory, you can boost the battery life in virtually any mobile
or power-sensitive application that currently uses SRAM. It relies on several
power-saving modes to consume less power than standard DRAM. Temperature-compensated refresh (TCR) adjusts the refresh rate based on ambient temperatures. Partial-array refresh (PAR) only uses power where and when it’s needed. And deep power-down
(DPD) doesn’t waste power when the device isn’t in use.
Other Key Benefits
High Density From a Tiny Die
Design Compatibility
Reduced debug time and design reuse gets you to market quicker.
Variable Latency
Cuts access time in half, making first data available in as little as 35ns.
Fixed Latency
Enables compatibility with older systems.
Adjustable Output Drive
Provides the ability to tune outputs to match system impedance and minimize
noise and power
| Features | Benefits | |
|---|---|---|
| Densities | 16�Mb | A range of densities, provides flexibility for many designs |
| Configuration | x16 | Available in x16 word sizes with selectable bytes and burst lengths |
| Supply Voltages | 1.7.95V core 1.7.3V I/O 1.7.6V I/O |
A single device that can operate over an extended Vccq range |
| Power Consumption | ISB = 30µA (TYP) ICC1 = 15mA (TYP) |
Offers extremely low power dissipation in standby and active modes; PAR in standby mode provides even greater power savings |
| Temperature Ranges | -30C to +85C -40C to +95C -40C to +105C |
Wide temperature ranges are ideal for rugged mobile and industrial environments |
| Packages | 48-, 54-ball VFBGA | Perfect for space-limited mobile applications |
What is CellularRAM® Memory?
Our CellularRAM memory is pseudo-static DRAM with an asynchronous/page and burst interface, hidden refresh operation, and SRAM pin compatibility, which makes it a convenient and effective solution, designed specifically for mobile applications.
DRAM is a specific kind of random access memory that is structurally simple—typically with one or two transistors and capacitors per bit—and it refreshes a memory cell's charge at regular intervals. Like DRAM, CellularRAM memory stores one bit of information in each of its millions of memory cells and refreshes these memory cells at regular intervals. But like SRAM, CellularRAM devices don't require external refresh support and use less power than standard DRAM.
If you want specific information about moving from SRAM to CellularRAM memory, including a discussion of power supply considerations, ball assignments, controller interface, and configurations, read our tech note,
TN-45-17: CellularRAM® Devices Replacing Single- and Dual-CE# SRAM.
Burst A/D MUX CellularRAM® for Cost-Sensitive Mobile Markets
Our burst A/D MUX CellularRAM pseudo-static DRAM leverages all of the key performance advantages of our CellularRAM memory, but with a 30% reduction in controller pin count, simplifying controller designs, lowering system design costs, and shortening design-cycle times. Burst A/D MUX products are the perfect memory solution for handsets targeted at emerging markets and other battery-powered applications where low power consumption is an important consideration. We offer our burst A/D MUX products in die form because they make excellent companion devices for NOR Flash and are ideal for MCPs.
We've also prepared several technical notes to help you make a good decision about integrating a burst A/D MUX device into your next design.
- TN-45-04: CellularRAM Multiplexed Async/Burst Operation Discusses multiplexing a non-multiplexed CellularRAM device at the substrate level.
- TN-45-06: Density Migration for x16 Multiplexed PSRAM Introduction Explains what you will need to account for when you migrate a burst multiplexed device from 16Mb through 64Mb.
- TN-45-10: Designing Applications with the x16 Burst A/D Multiplexed Interface Describes differences between a burst non-A/D MUX and burst A/D MUX device.
| Type | Secure | Title & Description | ID# | Updated | Size |
|---|---|---|---|---|---|
 |
Burst A/D MUX CellularRAM Memory Flyer: Describes how reduced pin count CellularRAM™ memory can save design time and lower cost | 8/2009 | 145KB | ||
|
CellularRAM PSRAM Flyer: Describes how CellularRAM PSRAM is an ideal, drop-in replacement for SRAM | 8/2009 | 206KB | ||
|
Functional Differences Between CellularRAM 1.0 and CellularRAM 1.5 : Discusses the functional difference between the CellularRAM 1.0 and CellularRAM 1.5 memory devices | TN-45-01 | 8/2005 | 144KB | |
|
CellularRAM Asynchronous and Mixed-Mode Slow-Clock WRITE Concerns : Discusses the use of Micron CellularRAM-based devices in Mixed Mode operation and slow clock speeds | TN-45-02 | 5/2005 | 103KB | |
|
CellularRAM Multiplexed Async/Burst Operation: Discusses multiplexing a non-multiplexed CellularRAM device at the substrate level | TN-45-04 | 1/2009 | 704KB | |
|
Density Migration for x16 Burst Multiplexed PSRAM Introduction: Discusses the design differences to account for when migrating a burst multiplexed device from 16Mb to 64Mb | TN-45-06 | 1/2006 | 67KB | |
|
Implementing CellularRAM® 2.0 x32 with Two CellularRAM 1.5 x16 Devices: Documents how the x32 CR2.0 memory interface can be emulated using a two-die stack of x16 CR 1.5 devices | TN-45-07 | 12/2006 | 110KB | |
|
64Mb Async/Page CellularRAM P25A to P25Z Transition Guide: Discusses migrating a design based on the async/page MT45W4MW16P (P25A) to the MT45W4MW16PC (P25Z) | TN-45-08 | 10/2005 | 54KB | |
|
64Mb Burst CellularRAM P25A to P25Z Transition Guide: Discusses migrating a design based on the async/page/burst MT45W4MW16B (P25A) to MT45W4MW16BC (P25Z) | TN-45-09 | 10/2005 | 66KB | |
|
Designing Applications with the x16 Burst A/D Multiplexed Interface: Discusses the differences between a burst non-A/D MUX and burst A/D MUX device | TN-45-10 | 11/2005 | 86KB | |
|
Using CellularRAM Memory to Replace UtRAM : Assists migration from a 128Mb UtRAM design (K1B2816B6M) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered | TN-45-13 | 1/2006 | 201KB | |
|
Using CellularRAM Memory to Replace Fujitsu 3V FCRAM: Discusses replacing Fujitsu 3V FCRAM with Micron CellularRAM memory | TN-45-14 | 2/2006 | 200KB | |
|
Row Boundary Crossing Functionality in CellularRAM™ Memory: Explains row boundary crossing in Micron CellularRAM memory devices | TN-45-15 | 11/2009 | 537KB | |
|
Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM: Discusses replacing Fujitsu 1.8V FCRAM with Micron CellularRAM memory | TN-45-16 | 3/2006 | 214KB | |
|
Using CellularRAM® Memory to Replace Single- and Dual-Chip Select SRAM: Discusses migrating a single- or dual-chip select SRAM design to Micron® CellularRAM® memory. Both hardware and software changes are covered | TN-45-17 | 1/2007 | 184KB | |
|
Using CellularRAM® Memory to Replace NEC Mobile Specified RAM (µPD46128512): Discusses migrating a 128Mb NEC Mobile Specified RAM design (µPD46128512) to Micron 128Mb CellularRAM memory (MT45W8MW16B). Both hardware and software changes are covered | TN-45-18 | 3/2006 | 234KB | |
|
Low-Power Options for Async/Page CellularRAM: Discusses the low-power options available to customers on async/page CellularRAM memory devices | TN-45-20 | 5/2006 | 202KB | |
|
Variable vs. Fixed Latency CellularRAM Operation: This technical note assists designers in understanding the differences between CellularRAM variable and fixed latency operations | TN-45-22 | 7/2006 | 125KB | |
|
Using CellularRAM Memory on a NOR FLASH Bus: Discusses design considerations when placing a CellularRAM memory device on a NOR Flash bus | TN-45-23 | 7/2006 | 401KB | |
|
Fixed-Latency Operation in CellularRAM 1.0 Devices: Details how Micron has enhanced CellularRAM CR1.0 functionality | TN-45-24 | 8/2006 | 192KB | |
|
Using Micron Asynchronous PSRAM with ADI ADSP-BF53x Blackfin® Processors: Describes the design requirements for a seamless memory connection between Analog Device’s Blackfin® processors and Micron® 70ns, 8Mb asynchronous PSRAM devices | TN-45-27 | 6/2007 | 272KB | |
|
Using a Micron CellularRAM® Device with the AMCC PPC405EZ Embedded Processor: Describes the design requirements for a seamless memory connection between the PPC405EZ and a Micron CellularRAM device | TN-45-28 | 2/2006 | 295KB | |
|
Using Micron® Asynchronous PSRAM with the NXP LPC2292 and LPC2294 Microcontrollers: Describes the design requirements for a seamless memory connection between the NXP LPC2292 and LPC2294 family of microcontrollers and a Micron asynchronous PSRAM device | TN-45-29 | 6/2007 | 261KB | |
|
PSRAM 101: An Introduction to Micron CellularRAM and PSRAM: Demonstrates PSRAM and CellularRAM memory advantages over other memory options for use in mobile handsets; and presents available configurations | TN-45-30 | 5/2008 | 360KB | |
|
Connecting Micron® CellularRAM Devices with the Atmel® Microcontroller: Describes the preferred methods for connecting Micron CellularRAM devices to the Amtel microcontroller | TN-45-33 | 6/2008 | 538KB | |
|
Bypass Capacitor Selection for High-Speed Designs: Describes bypass capacitor selection for high-speed designs. | TN-00-06 | 12/2009 | 490KB | |
|
IBIS Behavioral Models: Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site. | TN-00-07 | 11/2009 | 168KB | |
|
Thermal Applications: Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature | TN-00-08 | 5/2010 | 258KB | |
|
Understanding the Quality and Reliability Requirements for Bare Die Applications: Describes the quality and reliability requirements for bare die applications | TN-00-14 | 10/2009 | 156KB | |
|
Recommended Soldering Parameters: Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products. | TN-00-15 | 3/2007 | 71KB | |
|
Uprating of Semiconductors for High-Temperature Applications: Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer’s environmental specifications | TN-00-18 | 5/2010 | 439KB | |
|
Understanding Signal Integrity: Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life | TN-00-20 | 12/2009 | 2MB | |
|
SEMI Wafer Map Format: Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI®). With SEMI formatting, Micron’s customers can be confident they will always receive consistent, compatible, reliable map files. | TN-00-21 | 2/2009 | 113KB | |
|
Thinning Considerations for Wafer Products: Information on optimal wafer-thinning processes to meet specific customer requirements | TN-00-19 | 10/2009 | 75KB | |
|
Hands-On Electronics Education: Read how Micron partnered with Digilent to develop inexpensive and yet powerful digital system design boards. | 12/2009 | 1MB | ||
|
PSRAM and CellularRAM Part Numbering System: Part numbering guide for Micron PSRAM and CellularRAM products. | 12/2008 | 29KB | ||
|
Product Marks/Product and Packaging Labels: Explains product part marking, and product and packaging labels. | CSN-11 | 2/2010 | 580KB | |
|
PCN/EOL Systems: Explains Micron's product change notification and end-of-life systems. | CSN-12 | 8/2009 | 77KB | |
|
Wafer Packaging and Packaging Materials: Provides complete shipping and recycling information about each of the materials used for shipping Micron® products. | CSN-20 | 3/2010 | 587KB | |
|
Bare Die SiPs and MCMs: Describes design considerations for bare die SiPs and MCMs. | CSN-18 | 4/2009 | 155KB | |
|
Shipping Quantities: Provides tables of part quantity. | CSN-04 | 3/2010 | 515KB | |
|
Micron KGD Definitions: Describes the testing specifications and parameters for Micron's KGD-C1 and KGD-C2 DRAM die. | CSN-22 | 7/2009 | 67KB | |
|
Proper Handling Procedures for Modules: Includes procedures for how to properly handle modules. | CSN-23 | 12/2007 | 1MB | |
|
Micron Component and Module Packaging: Explanation of Micron packaging labels and procedures. | CSN-16 | 3/2010 | 833KB | |
|
ESD Precautions for Die/Wafer Handling and Assembly: Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs. | CSN-24 | 8/2010 | 122KB | |
|
Electronic Data Interchange: Describes EDI transmission sets, protocol, and contacts. | CSN-06 | 9/2005 | 55KB | |
|
RMA Procedures for Packaged Product and Bare Die Devices: Outlines standard returned material authorization (RMA) procedures, as well as the differences associated with bare die RMAs. | CSN-07 | 8/2004 | 52KB | |
|
Environmental Programs: Describes the environmental programs at Micron, including air quality, pollution prevention, reclamation and reuse, and waste recycling and reduction. | CSN-05 | 6/2004 | 55KB | |
|
ISO System Management Standards: Describes ISO system management standards. | CSN-08 | 4/2004 | 40KB | |
|
The Future of Memory and Storage: Overview of trends for main memory and Flash memory | 12/2009 | 2MB | ||
|
DRAM Component Part Numbering System: Part numbering guide for DDR3/DDR2/DDR/SDR SDRAM, Mobile LPDRAM, and RLDRAM components | 5/2010 | 33KB | ||
|
FBGA Date Codes: Date codes for FBGA-packaged components | 8/2005 | 23KB | ||
|
Avoid Counterfeit Products: Highlights Micron-guaranteed products and how to buy genuine Micron products. | 3/2010 | 201KB |
Please Note: To view Secure Documents (
) please log in or click on a secured document to request access.
- What is CellularRAM memory?
- CellularRAM memory is a family of pseudo-SRAM (PSRAM) products that are backward compatible with 6T (six-transistor) SRAM and early generation Async or Page PSRAM. CellularRAM offers a complete new set of devices with innovative functionality burst, providing an evolutionary path to pseudo SRAM.
- What are the target markets and applications for CellularRAM devices?
- CellularRAM products target handsets, but can be used anywhere cache or buffered memory is required.
- What are the benefits of CellularRAM technology?
- CellularRAM technology's multiple benefits include:
- backward compatibility with standard asynchronous SRAM devices
- DRAM technology with an SRAM interface
- higher densities and performance
- lower cost per bit than current SRAM devices
- What are the specific features that distinguish the CellularRAM family from existing SRAM architectures?
- 6T-SRAM is most commonly used in densities of 2/4/8Mb in cell phone designs. It features 70ns/85ns random cycle times with a bandwidth of ~30 MB/s in a x16 configuration. Active power consumption at 1.8V is 25mA. CellularRAM devices significantly exceed today’s low-power 6T-SRAM in density and bandwidth, while keeping active power consumption at equally low levels. CellularRAM products feature a random cycle time of 70ns at 1.8V, and allow a peak bandwidth of 208 MB/s in burst mode.
- What densities and configurations of CellularRAM does Micron offer?
- Micron offers 16Mb, 32Mb, 64Mb and 128Mb densities in the Async/Page and Async/Page/Burst configurations. Micron offers all densities of CellularRAM in wafer form as KGD (Known Good Die). In wafer form, Micron also offers the Burst A/D multiplexed configuration.
